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Lattice Power To Offer High-Power Silicon Substrate-based LEDs
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Thursday, June 14, 2012:
GUANGZHOU, CHINA: Lattice Power Corp. announced the start of volume production of its new generation GaN-based high powered LEDs on silicon substrate. This development sets the backdrop for a sharp reduction in the prices of energy-efficient LED light bulbs worldwide.
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Lattice Power is the first and only company in volume production of GaN-on-Silicon LED chip, with products that are comparable to high-end chips that rely on conventional sapphire substrates. At operation current of 350mA, the 45-mil product is capable of producing 130 lumen cool white with an efficiency of 120 lumens for each watt consumed.
Moreover, silicon substrates are readily available in larger diameters and at a fraction of the cost of sapphire substrates resulting in substantial cost reductions for downstream manufacturers.
Twenty strategic customers have received the LEDs and will incorporate them into indoor and outdoor lighting applications. Lattice Power silicon substrate-based LED series encompasses four different chip sizes: 28mil x 28mil, 35mil x 35mil, 45mil x 45mil, and 55mil x 55mil. Chip power ranges from 0.5 watts to 2 watts.
Lattice Power has always invested heavily in research and development in silicon substrate-based LED technology.
The commercialization of its silicon substrate-based-power chip series represents a second milestone for Lattice Power after the launch and volume production of its smaller size silicon substrate-based LED chips used in display and signage recently.
Using GaN-on-Silicon technology to make commercial grade LEDs in the United States and Europe has shown promising laboratory resultsut not at volume production levels like Lattice Power has in the past year. Lattice Power, realizing its potential early on, started to work on this technology before it became part of the mainstream industry perspective. Lattice Power has filed more than 200 innovative international and domestic patents in this field.
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