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RFMD Announces Design Kits For Agilent Advanced Design System 2011 Software
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Friday, June 15, 2012:
GREENSBORO, USA: RF Micro Devices Inc. announced that its Foundry Services business unit has updated its process design kits (PDKs) for use with Agilent Technologies' recently released Advanced Design System (ADS) 2011 EDA software.
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The enhanced PDKs are available immediately to current and prospective RFMD Foundry Services customers for RFMD's Gallium Nitride (GaN) and Gallium Arsenide (GaAs) process technologies.
The RFMD PDKs support a complete ADS front- to back-end MMIC design flow with scalable devices, a native design rule checker, and the layout capabilities in ADS 2011. The PDKs work seamlessly with ADS 2011, ADS 2009 Update 1 and ADS 2008 Update 2, enabling RFMD Foundry Services customers to take full advantage of the significant performance advantages of ADS 2011.
RFMD's GaN and GaAs process technologies are available to Foundry Services customers, supported by RFMD's industry-leading cycle times.
RFMD's foundry offerings include GaN1 (GaN for high power), a 0.5-micron GaN on SiC process technology enabling 65V CW operation and optimized for maximum performance at 4 GHz and below. RFMD's GaN1 power technology provides a high breakdown voltage above 400V, while RFMD's GaN2 is a 0.5-micron GaN on SiC process technology offering high linearity for high performance communications systems. Both GaN technologies are manufactured in RFMD's Greensboro, NC, fab, one of the world's largest III-V fabs.
The Greensboro fab also manufactures HBT8D, RFMD's high-volume rugged InGap technology for handset and mixed signal applications, and IPC3, an integrated passive component technology that complements RFMD's GaN technology portfolio with high power compatibility.
Additional RFMD foundry offerings include FD25, a low noise, 0.25-micron GaAs pHEMT technology, and FD30, a high power 0.3-micron GaAs pHEMT technology, both of which support applications up through 25 GHz. RFMD's technology portfolio also includes FET1H, a 0.6-micron GaAs pHEMT technology, and FET2D, a 0.6-micron GaAs E/D pHEMT technology.
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